SiC/GaN/IGBT 測試方案

第三代半導體 SiC , GaN 具備高電壓、大電流、高切換(switch)速度等物理特性,其功率元件所需的測試條件已大幅超越已矽(Si)為主的測試要求。
您目前使用的經典設備如Keysight 4155/4156 , Tektronix 371 等, 已不符第三代半導體所需的測試要求。

在第三代半導體您需要:
1. 更高的電流範圍
2. 更高的工作電壓
3. 更高的工作頻率
4. 更為精細的半導體特性測試( I/V, C/V, RDS, Dynamic range, Drain/Transfer 特性 …)

克達科技提供了完整的第三代半導體所要求的規格的測試方案:
•     DC Power Device Parameter 測試方案
•     AC Power Device parameter 測試方案
•     Low current device characterization parameter 測試方案

•   DC Power Device Parameter 測試方案

Power Device DC Parameters Symbol
Drain-source breakdown voltage Vbd Vbd
Gate threshold voltage Vth > Vth
Zero gate voltage drain current Idss Idss
Gate-source leakage current include Zener diode Igss Igss
Gate resistance Rg Rg
Gate resistance Rg Rg
Gate resistance Rg Rg
Diode forward voltage VF Vf
Typ. Output characteristics IdVd Id-Vd
Typ. Drain-source on-state resistance Rsd-Id Rds-Id
Drain-source on-state resistance Ron Ron
Typ. Transfer characteristics IdVg Id-Vg
Typ. Gate charge Qg Qg
Typ. Capacitances Crss Crss
Typ. Capacitances Ciss Ciss
Typ. Capacitances Coss Coss
Forward characteristics of reverse diode If-Vsd If-Vsd

•    AC Power Device parameter 測試方案


Power Device AC Parameters Symbol
Input capacitance Ciss
Output capacitance > Coss
Effective output capacitance, enery related Co(er)
Effective output capacitance, time related Co(tr)
Turn-on delay time td(on)
Rise time tr
Turn-off delay time td(off)
Fall time tf
Reverse recovery time trr
Reverse recovery charge Qrr
Peak reverse recovery current Irrm
Gate to source charge Qgs
Gate to drain charge Qgd
Gate charge total Qg
Gate plateau voltage Vplateau
Power Device Ruggedness Testing Symbol
Application (Flyback) relevant avalanche current Ias
MOSFET dv/dt ruggedness dv/dt
Reverse diode dv/dt dv/dt
Maximum diode commutation speed dif/dt

•   Low current device characterization parameter 測試方案


Low Current Device Characterization Parameters Symbol
Threshould Voltage Vth
Drain induced Barrier Low >DIBL
Mobility u
Subthreshold Swing S.S
On Current Ion
Off Current Ioff
Time Dependent Dielectric Breakdown TDDB
Bias Temperature Instability BTI
Hot Carrier Injection HCI
Electromigration Instability EM
Gate Oxide Breadown GOD
Stress induced Voiding SIV
Transconductance Gm
Temperature Coefficient of resistance TCR
Stress and Recovery Dynamic Behavior   
Trap-Detrap Dynamic Behavior