SiC/GaN/IGBT 測試方案
您目前使用的經典設備如Keysight 4155/4156 , Tektronix 371 等, 已不符第三代半導體所需的測試要求。
在第三代半導體您需要：
1. 更高的電流範圍
2. 更高的工作電壓
3. 更高的工作頻率
4. 更為精細的半導體特性測試( I/V, C/V, RDS, Dynamic range, Drain/Transfer 特性 …)
克達科技提供了完整的第三代半導體所要求的規格的測試方案：
• DC Power Device Parameter 測試方案
• AC Power Device parameter 測試方案
• Low current device characterization parameter 測試方案
• DC Power Device Parameter 測試方案
| Power Device DC Parameters | Symbol |
| Drain-source breakdown voltage Vbd | Vbd |
| Gate threshold voltage Vth | > Vth |
| Zero gate voltage drain current Idss | Idss |
| Gate-source leakage current include Zener diode Igss | Igss |
| Gate resistance Rg | Rg |
| Gate resistance Rg | Rg |
| Gate resistance Rg | Rg |
| Diode forward voltage VF | Vf |
| Typ. Output characteristics IdVd | Id-Vd |
| Typ. Drain-source on-state resistance Rsd-Id | Rds-Id |
| Drain-source on-state resistance Ron | Ron |
| Typ. Transfer characteristics IdVg | Id-Vg |
| Typ. Gate charge Qg | Qg |
| Typ. Capacitances Crss | Crss |
| Typ. Capacitances Ciss | Ciss |
| Typ. Capacitances Coss | Coss |
| Forward characteristics of reverse diode If-Vsd | If-Vsd |
• AC Power Device parameter 測試方案
| Power Device AC Parameters | Symbol |
| Input capacitance | Ciss |
| Output capacitance | > Coss |
| Effective output capacitance, enery related | Co(er) |
| Effective output capacitance, time related | Co(tr) |
| Turn-on delay time | td(on) |
| Rise time | tr |
| Turn-off delay time | td(off) |
| Fall time | tf |
| Reverse recovery time | trr |
| Reverse recovery charge | Qrr |
| Peak reverse recovery current | Irrm |
| Gate to source charge | Qgs |
| Gate to drain charge | Qgd |
| Gate charge total | Qg |
| Gate plateau voltage | Vplateau |
| Power Device Ruggedness Testing | Symbol |
| Application (Flyback) relevant avalanche current | Ias |
| MOSFET dv/dt ruggedness | dv/dt |
| Reverse diode dv/dt | dv/dt |
| Maximum diode commutation speed | dif/dt |
• Low current device characterization parameter 測試方案
| Low Current Device Characterization Parameters | Symbol |
| Threshould Voltage | Vth |
| Drain induced Barrier Low | >DIBL |
| Mobility | u |
| Subthreshold Swing | S.S |
| On Current | Ion |
| Off Current | Ioff |
| Time Dependent Dielectric Breakdown | TDDB |
| Bias Temperature Instability | BTI |
| Hot Carrier Injection | HCI |
| Electromigration Instability | EM |
| Gate Oxide Breadown | GOD |
| Stress induced Voiding | SIV |
| Transconductance | Gm |
| Temperature Coefficient of resistance | TCR |
| Stress and Recovery Dynamic Behavior | |
| Trap-Detrap Dynamic Behavior |
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