SiC/GaN/IGBT 測試方案

第三代半導體 SiC , GaN 具備高電壓、大電流、高切換(switch)速度等物理特性，其功率元件所需的測試條件已大幅超越已矽(Si)為主的測試要求。
您目前使用的經典設備如Keysight 4155/4156 , Tektronix 371 等, 已不符第三代半導體所需的測試要求。

在第三代半導體您需要：
1. 更高的電流範圍
2. 更高的工作電壓
3. 更高的工作頻率
4. 更為精細的半導體特性測試( I/V, C/V, RDS, Dynamic range, Drain/Transfer 特性 …)

克達科技提供了完整的第三代半導體所要求的規格的測試方案：
•     DC Power Device Parameter 測試方案
•     AC Power Device parameter 測試方案
•     Low current device characterization parameter 測試方案

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•   DC Power Device Parameter 測試方案

Power Device DC Parameters	Symbol
Drain-source breakdown voltage Vbd	Vbd
Gate threshold voltage Vth	> Vth
Zero gate voltage drain current Idss	Idss
Gate-source leakage current include Zener diode Igss	Igss
Gate resistance Rg	Rg
Gate resistance Rg	Rg
Gate resistance Rg	Rg
Diode forward voltage VF	Vf
Typ. Output characteristics IdVd	Id-Vd
Typ. Drain-source on-state resistance Rsd-Id	Rds-Id
Drain-source on-state resistance Ron	Ron
Typ. Transfer characteristics IdVg	Id-Vg
Typ. Gate charge Qg	Qg
Typ. Capacitances Crss	Crss
Typ. Capacitances Ciss	Ciss
Typ. Capacitances Coss	Coss
Forward characteristics of reverse diode If-Vsd	If-Vsd

•    AC Power Device parameter 測試方案

Power Device AC Parameters	Symbol
Input capacitance	Ciss
Output capacitance	> Coss
Effective output capacitance, enery related	Co(er)
Effective output capacitance, time related	Co(tr)
Turn-on delay time	td(on)
Rise time	tr
Turn-off delay time	td(off)
Fall time	tf
Reverse recovery time	trr
Reverse recovery charge	Qrr
Peak reverse recovery current	Irrm
Gate to source charge	Qgs
Gate to drain charge	Qgd
Gate charge total	Qg
Gate plateau voltage	Vplateau
Power Device Ruggedness Testing	Symbol
Application (Flyback) relevant avalanche current	Ias
MOSFET dv/dt ruggedness	dv/dt
Reverse diode dv/dt	dv/dt
Maximum diode commutation speed	dif/dt

•   Low current device characterization parameter 測試方案

Low Current Device Characterization Parameters	Symbol
Threshould Voltage	Vth
Drain induced Barrier Low	>DIBL
Mobility	u
Subthreshold Swing	S.S
On Current	Ion
Off Current	Ioff
Time Dependent Dielectric Breakdown	TDDB
Bias Temperature Instability	BTI
Hot Carrier Injection	HCI
Electromigration Instability	EM
Gate Oxide Breadown	GOD
Stress induced Voiding	SIV
Transconductance	Gm
Temperature Coefficient of resistance	TCR
Stress and Recovery Dynamic Behavior
Trap-Detrap Dynamic Behavior